Magnetic random access memory
US6707085B2 · kind B2 · utility
6Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Dec 30, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic random access memory (MRAM) is disclosed, which achieves high integration by forming second word lines that serve as two write lines for one pair of MRAMs. A contact plug is formed by connecting the second word line to a metal wire formed above the bit lines. As a result, the bit lines and the contact plug are used to drive the device, thereby achieving high integration of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.