Method for forming crystalline silicon nitride
US6707086B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 15, 2000 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Jan 11, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the present invention, a method for forming a crystalline silicon nitride layer, includes the steps of providing a crystalline silicon substrate with an exposed surface, precleaning the exposed surface by employing a hydrogen prebake and exposing the exposed surface to nitrogen to form a crystalline silicon nitride layer. Also, a trench capacitor, in accordance with the present invention, includes a crystalline silicon substrate including deep trenches having surface substantially free of native oxide. A dielectric stack, including a crystalline silicon nitride layer, is formed on the sidewalls of the trenches. The dielectric stack forms a node dielectric between electrodes of the trench capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.