Semiconductor-on-insulator resistor-capacitor circuit
US6707118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Nov 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
Abstract
A semiconductor device may be formed with a floating body positioned over an insulator in a semiconductor structure. A gate may be formed over the floating body but spaced therefrom. The semiconductor structure may include doped regions surrounding the floating body The floating body provides a distributed capacitance and resistance along its length to form an integrated RC circuit. The extent of the resistance is a function of the cross-sectional area of the floating body along the source and drain regions and its capacitance is a function of the spacing between the doped regions and the body and between the gate and the body. In some embodiments of the present invention, compensation for input voltage variations may be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.