Volatile memory with non-volatile ferroelectric capacitors
US6707702B1 · kind B1 · utility
33Cited by
11References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 13, 2002 |
| Grant date | Mar 16, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C14/0072
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory apparatus and methods are provided for storing data in a semiconductor device, comprising volatile and non-volatile portions, where the non-volatile portion comprises two ferroelectric capacitors coupled with one of two internal nodes in the volatile memory portion. Apparatus is also disclosed wherein first and second ferroelectric capacitors are coupled with the first internal node of the volatile portion, and third and fourth ferroelectric capacitors are coupled with the second internal node of the volatile portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.