Method for producing an electrically conducting connection

US6708405B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Barbara Hasler · Munich, DE
• Rainer Florian Schnabel · Weilmünster, DE
• Guenther Schindler · Hersbruck, DE
• Volker Weinrich · Paris, FR

Key dates

• Filing date: Aug 28, 2001
• Grant date: Mar 23, 2004
• Expiry date: Oct 22, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49165
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is described for producing a conducting connection through insulating layers by way of a contact hole and conducting materials with which the contact hole is filled. The method permits the production of a contact hole resembling the shape of a wineglass, into which conducting filling material and barrier layers can be inserted without the known problems such as void formation, overetching trenches, and dielectric close-off. It is possible in this way, for example, to produce an electric connection between the diffusion zone of a selection transistor and the lower electrode of a storage capacitor of large-scale integrated DRAM and FeRAM components with the aid of only a few mask steps.