Reactor and method for chemical vapor deposition
US6709520B1 · kind B1 · utility
7Cited by
18References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 16, 2000 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Oct 16, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/38
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The process for chemical vapor deposition of layers of material on a substrate which extend generally in a plane is disclosed. The process for depositing thin film materials on the substrate is made more economical by virtue of a better energy balance than previously disclosed. The substrate is heated by radiation from the heat of a duct but also by the gases passing over the substrate which themselves are heated by the duct. The heating of the gases further improves the coupling between the heating means and the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.