Method for fabricating a III-V nitride film and an apparatus for fabricating the same
US6709703B2 · kind B2 · utility
4Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | May 17, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate is set on a susceptor installed in a reactor and arranged horizontally. A cooling jacket is provided at a portion of the inner wall of the reactor that is opposite to the substrate. By flowing a given cooling medium through the cooling jacket with a pump connected to the jacket, at least the opposite portion of the inner wall is cooled down, which inhibits the reaction between raw material gases introduced into the reactor. As a result, in fabricating a III-V nitride film, the film growth rate is developed and the crystal quality is developed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.