Method for manufacturing semiconductor and method for manufacturing semiconductor device
US6709881B2 · kind B2 · utility
7Cited by
6References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Nov 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor includes: a first step of forming an etching stop layer on a first semiconductor layer; and a second step of forming a second semiconductor layer made of a group III-V compound semiconductor on the etching stop layer. An etching rate for the etching stop layer by dry etching is less than an etching rate for the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.