Semiconductor device having a shallow junction and a fabrication process thereof
US6709959B2 · kind B2 · utility
2Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1999 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Feb 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is fabricated by introducing an impurity element into a Si substrate by an ion implantation process with an energy set such that the depth of a junction formed in the Si substrate by the impurity element is less than about 50 nm, and then annealing the substrate, wherein the method further includes a step of removing an oxide film from a surface of the Si substrate before the step of ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.