Method of preventing seam defects in isolated lines
US6709974B2 · kind B2 · utility
2Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Dec 19, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preventing seam defects on narrow, isolated lines of 0.3 micron or less during CMP process is provided. The solution is to change the size of features of dummy metal structures on the same layer as the metal layer to have a width that is about 0.6 micron or less so that during the electroplating the deposition rate in the features is similar to the narrow, isolated lines. The density, shape, and proximity of the dummy metal structures further prevents the seam defects during CMP processing by preventing Galvanic corrosion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.