Semiconductor light reception device of end face light incidence type
US6710378B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 25, 2000 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Mar 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photo sensor is formed in a partial area of the principal surface of a substrate. The photo sensor includes a light reception layer parallel to the principal surface, the light reception layer being made of semiconductor and generating carriers in response to received light. A light waveguide is formed in a partial area of the principal surface of the substrate, the light waveguide propagating light in a direction parallel to the principal surface and introducing light into the light reception layer. A semi-insulating semiconductor film covers side faces of the photo sensor. A pair of electrodes flows current into the light reception layer of the photo sensor in a thickness direction of the light reception layer. A semiconductor light reception device having a structure suitable for high-speed operation and easy to manufacture is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.