Dual trench power MOSFET
US6710403B2 · kind B2 · utility
201Cited by
195References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Jul 30, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductor region, and a source trench which extends into the first semiconductor region. The source trench is laterally spaced from the gate trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.