Schottky rectifier with insulation-filled trenches and method of forming the same
US6710418B1 · kind B1 · utility
39Cited by
210References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 11, 2002 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Oct 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
Abstract
In accordance with an embodiment of the present invention, a semiconductor rectifier includes an insulation-filled trench formed in a semiconductor region. Strips of resistive material extend along the trench sidewalls. The strips of resistive material have a conductivity type opposite that of the semiconductor region. A conductor extends over and in contact with the semiconductor region so that the conductor and the underlying semiconductor region form a Schottky contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.