Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes
US6710987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Mar 23, 2004 |
| Priority date | — |
| Expiry date | Jan 31, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction device and method for making same is provided. A first ferromagnetic portion is provided. A barrier is provided on the first ferromagnetic portion. The barrier includes a first barrier portion on the first ferromagnetic portion. The first barrier portion is oxidized. After oxidizing, a second barrier portion is provided on the first barrier portion. The second barrier may be oxidized or annealed. A second ferromagnetic portion is provided on the barrier. The barrier of the resultant device has a reduced number of pinholes, minimizing the amount of the non-tunnel current, and an improved symmetry of electrical properties. This leads to advantages in performance characteristics and mass-production of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.