Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer
US6713236B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Aug 27, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A lithography method for use in the manufacture of semiconductor devices, which prevents lithographic exposure of a periphery region or edge region of a semiconductor wafer and which prevents the formation of black silicon related particle contamination in a patterned region on the periphery region as a result of, e.g., a deep trench manufacturing process. A quencher solution is applied at peripheral areas of the wafer on which a photoresist layer is formed. The quencher solution neutralizes acid generated in the photoresist when the photoresist is exposed to radiation, thereby preventing the photoresist on the peripheral region of the wafer to dissolve during a subsequent developing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.