Method of forming a bottle-shaped trench in a semiconductor substrate
US6713341B2 · kind B2 · utility
22Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jun 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/047
Abstract
A method of forming a bottle-shaped trench in a semiconductor substrate. The method is suitable for formation of the capacitor of DRAM. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. A nitride film is then formed on the top portion of the trench. Next, the semiconductor substrate is etched through the bottom portion of the trench by a solution of hydrogen peroxide and hydrofluoric acid as the etchant to form a bottle-shaped trench followed by removal of the nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.