Method for making a semiconductor device having a high-k gate dielectric
US6713358B1 · kind B1 · utility
31Cited by
15References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 5, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Dec 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After forming a silicon nitride layer on the high-k gate dielectric layer, a gate electrode is formed on the silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.