Lawrence Foley
2Patents
2h-index
8Co-inventors
30Inventor score
Filing activity: Nov 5, 2002 → Apr 18, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6713358B1 | Method for making a semiconductor device having a high-k gate dielectric | Electricity | 31 | Expired |
| US7354862B2 | Thin passivation layer on 3D devices | Electricity | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.