Physical vapor deposition targets
US6713391B2 · kind B2 · utility
8Cited by
22References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jan 3, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2999/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention includes a non-magnetic physical vapor deposition target. The target has at least 30 atom percent total of one or more of Co, Ni, Ta, Ti, Pt, Mo and W, and at least 10 atom percent silicon. The target also has one phase and not more than 1% of any additional phases other than said one phase. In another aspect, the invention includes a non-magnetic physical vapor deposition target consisting essentially of Co and/or Ni, silicon, and one phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.