Patent · US Expired

Method for improving the stability of amorphous silicon

US6713400B1 · kind B1 · utility

3Cited by
12References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 16, 2000
Grant dateMar 30, 2004
Priority date
Expiry dateNov 16, 2020

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/2962

Abstract

A method of producing a metastable degradation resistant amorphous hydrogenated silicon film is provided, which comprises the steps of growing a hydrogenated amorphous silicon film, the film having an exposed surface, illuminating the surface using an essentially blue or ultraviolet light to form high densities of a light induced defect near the surface, and etching the surface to remove the defect.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.