Howard M. Branz
17Patents
6h-index
21Co-inventors
66Inventor score
Filing activity: Nov 6, 1992 → Feb 9, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5377037A | Electrochromic-photovoltaic film for light-sensitive control of optical transmittance | Physics | 65 | Expired |
| US8075792B1 | Nanoparticle-based etching of silicon surfaces | Emerging Cross-Sectional Technologies | 25 | Active |
| US7601215B1 | Method for rapid, controllable growth and thickness, of epitaxial silicon films | Chemistry; Metallurgy | 10 | Active |
| US6441942B1 | Electrochromic projection and writing device | Physics | 7 | Expired |
| US8203154B2 | Stacked switchable element and diode combination with a low breakdown switchable element | Electricity | 7 | Active |
| US8569708B2 | High sensitivity, solid state neutron detector | Electricity | 6 | Active |
| US9029792B2 | High sensitivity, solid state neutron detector | Electricity | 3 | Active |
| US6713400B1 | Method for improving the stability of amorphous silicon | Emerging Cross-Sectional Technologies | 3 | Expired |
| US8828765B2 | Forming high efficiency silicon solar cells using density-graded anti-reflection surfaces | Emerging Cross-Sectional Technologies | 3 | Active |
| US8815104B2 | Copper-assisted, anti-reflection etching of silicon surfaces | Emerging Cross-Sectional Technologies | 2 | Active |
| US8729798B2 | Anti-reflective nanoporous silicon for efficient hydrogen production | Emerging Cross-Sectional Technologies | 1 | Active |
| US7067850B2 | Stacked switchable element and diode combination | Electricity | 1 | Expired |
| US11588091B2 | Thermoelectric devices based on nanophononic metamaterials | Electricity | 0 | Active |
| US11251318B2 | Efficient black silicon photovoltaic devices with enhanced blue response | Emerging Cross-Sectional Technologies | 0 | Active |
| US9076903B2 | Forming high-efficiency silicon solar cells using density-graded anti-reflection surfaces | Emerging Cross-Sectional Technologies | 0 | Active |
| US8987115B2 | Epitaxial growth of silicon for layer transfer | Emerging Cross-Sectional Technologies | 0 | Active |
| US8466447B2 | Back contact to film silicon on metal for photovoltaic cells | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.