Field effect transistor structure with bent gate
US6713793B1 · kind B1 · utility
11Cited by
17References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2000 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jul 11, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An inexpensive and small-sized semiconductor device with high power output performance includes a semiconductor substrate; an active region on the semiconductor substrate; first and second channel regions on the active region so that width directions of the first and second channel regions are substantially perpendicular to each other, bent gate electrodes on the first and second channel regions; and source electrodes and drain electrodes on opposite sides of the bent gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.