Lateral semiconductor device
US6713794B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 3, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jan 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A semiconductor device including a semiconductor base, a first semiconductor region formed in the semiconductor base, a second semiconductor region formed in the semiconductor base, a third semiconductor region formed in the first semiconductor region, a first main electrode which is formed on the first and third semiconductor regions, a second main electrode which is formed on the second semiconductor region, an insulating film formed on the semiconductor base and first semiconductor region, and a gate electrode formed on the insulating film. The fourth semiconductor region is formed in the semiconductor base between the first and second semiconductor regions below an end region of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.