Field effect transistor having a lateral depletion structure
US6713813B2 · kind B2 · utility
66Cited by
75References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 30, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jan 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A field effect transistor device and a method for making a field effect transistor device are disclosed. The field effect transistor device includes a stripe trench extending from the major surface of a semiconductor substrate into the semiconductor substrate to a predetermined depth. The stripe trench contains a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.