Inventor · Murray, UT, US

Bruce D. Marchant

25Patents

13h-index

25Co-inventors

77Inventor score

Filing activity: May 29, 1998 → May 10, 2013

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8143124B2	Methods of making power semiconductor devices with thick bottom oxide layer	Emerging Cross-Sectional Technologies	132	Active
US7449354B2	Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch	Emerging Cross-Sectional Technologies	80	Active
US6713813B2	Field effect transistor having a lateral depletion structure	Electricity	66	Expired
US7504303B2	Trench-gate field effect transistors and methods of forming the same	Electricity	61	Active
US7446374B2	High density trench FET with integrated Schottky diode and method of manufacture	Electricity	55	Active
US7078296B2	Self-aligned trench MOSFETs and methods for making the same	Electricity	53	Expired
US6818513B2	Method of forming a field effect transistor having a lateral depletion structure	Electricity	28	Expired
US7713822B2	Method of forming high density trench FET with integrated Schottky diode	Electricity	24	Active
US7382019B2	Trench gate FETs with reduced gate to drain charge	Electricity	23	Expired
US7485532B2	Method of forming trench gate FETs with reduced gate to drain charge	Electricity	18	Active
US7923776B2	Trench-gate field effect transistor with channel enhancement region and methods of forming the same	Electricity	17	Active
US7772642B2	Power trench gate FET with active gate trenches that are contiguous with gate runner trench	Emerging Cross-Sectional Technologies	16	Active
US6033489A	Semiconductor substrate and method of making same	Emerging Cross-Sectional Technologies	14	Expired
US8043913B2	Method of forming trench-gate field effect transistors	Electricity	13	Active
US7936007B2	LDMOS with self aligned vertical LDD backside drain	Electricity	10	Active
US7902071B2	Method for forming active and gate runner trenches	Emerging Cross-Sectional Technologies	7	Active
US8829641B2	Method of forming a dual-trench field effect transistor	Electricity	5	Active
US8936985B2	Methods related to power semiconductor devices with thick bottom oxide layers	Emerging Cross-Sectional Technologies	3	Active
US8450177B2	LDMOS with self aligned vertical LDD backside drain	Electricity	2	Active
US7884390B2	Structure and method of forming a topside contact to a backside terminal of a semiconductor device	Electricity	2	Active
US8884365B2	Trench-gate field effect transistor	Electricity	2	Active
US7781835B2	Lateral drain MOSFET with improved clamping voltage control	Electricity	1	Active
US8441069B2	Structure and method for forming trench-gate field effect transistor with source plug	Electricity	1	Active
US7998819B2	Lateral drain MOSFET with improved clamping voltage control	Electricity	0	Active
US8536042B2	Method of forming a topside contact to a backside terminal of a semiconductor device	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.