Multilayer high &kgr; dielectric films
US6713846B1 · kind B1 · utility
146Cited by
3References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 25, 2002 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Jan 25, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new multilayer dielectric film for improving dielectric constant and thermal stability of gate dielectrics is provided. The multilayer dielectric film comprises a first layer formed of a metal oxide material having a high dielectric constant, and a second layer formed on the first layer. The second layer is formed of a metal silicate material having a dielectric constant lower than the dielectric constant of the first layer. A semiconductor transistor incorporating the multilayer dielectric film is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.