Aviza Technology Limited
32Patents
5Active
32Granted
40Portfolio score
Filing activity: Jul 31, 2000 → Jul 12, 2007 · 5 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7205247B2 | Atomic layer deposition of hafnium-based high-k dielectric | Electricity | 538 | Expired |
| US7205246B2 | Forming low k dielectric layers | Electricity | 502 | Expired |
| US6713846B1 | Multilayer high &kgr; dielectric films | Electricity | 146 | Expired |
| US6890386B2 | Modular injector and exhaust assembly | Chemistry; Metallurgy | 32 | Expired |
| US6846149B2 | Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system | Emerging Cross-Sectional Technologies | 30 | Expired |
| US6921437B1 | Gas distribution system | Chemistry; Metallurgy | 30 | Expired |
| US6900413B2 | Hot wall rapid thermal processor | Mechanical Engineering; Lighting; Heating | 20 | Expired |
| US8585873B2 | Methods and apparatus for sputtering | Electricity | 17 | Active |
| US6798529B2 | In-situ method and apparatus for end point detection in chemical mechanical polishing | Performing Operations; Transporting | 16 | Expired |
| US6901317B2 | Inertial temperature control system and method | Electricity | 10 | Expired |
| US7335569B2 | In-situ formation of metal insulator metal capacitors | Electricity | 9 | Expired |
| US7470470B2 | System and method for forming multi-component dielectric films | Electricity | 8 | Expired |
| US6874770B2 | High flow rate bubbler system and method | Performing Operations; Transporting | 8 | Expired |
| US6761770B2 | Atmospheric pressure wafer processing reactor having an internal pressure control system and method | Physics | 7 | Expired |
| US7109131B2 | System and method for hydrogen-rich selective oxidation | Electricity | 5 | Expired |
| US6802712B2 | Heating system, method for heating a deposition or oxidation reactor, and reactor including the heating system | Chemistry; Metallurgy | 5 | Expired |
| US7351669B2 | Method of forming a substantially closed void | Electricity | 4 | Expired |
| US7153580B2 | Low κ dielectric inorganic/organic hybrid films and method of making | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6844528B2 | Hot wall rapid thermal processor | Mechanical Engineering; Lighting; Heating | 4 | Expired |
| US6984168B1 | Apparatus and method for chemical mechanical polishing of substrates | Performing Operations; Transporting | 4 | Expired |
| US7029381B2 | Apparatus and method for chemical mechanical polishing of substrates | Performing Operations; Transporting | 4 | Expired |
| US6933011B2 | Two-step atomic layer deposition of copper layers | Electricity | 3 | Expired |
| US8486198B2 | Method of processing substrates | Electricity | 2 | Active |
| US6864466B2 | System and method to control radial delta temperature | Electricity | 2 | Expired |
| US7282158B2 | Method of processing a workpiece | Chemistry; Metallurgy | 2 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.