Semiconductor inspection apparatus
US6714030B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2003 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Mar 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor inspection apparatus which is possible to inspect a plurality of semiconductor devices collectively at one time, which has conventionally been difficult because of precision or the like of probes. A method of manufacturing the semiconductor inspection apparatus comprises the steps of forming a cover film on a surface of the silicon substrate and forming a plurality of probes of a polygonal cone shape or a circular cone shape through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a beam or a diaphragm for each probe through etching after patterning by photolithography, after the cover film is removed, again forming a cover film on the surface of the silicon substrate and forming a through hole corresponding to the probe through etching after patterning by photolithography, and after the cover film is removed, forming an insulating film on the surface of the silicon substrate, forming a metal film on a surface of the insulating film, and forming a wiring lead through etching after patterning by photolithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.