Three dimensional reconstruction metrology
US6714892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Mar 30, 2004 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/852
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method of metrology (10) whereby a three dimensional shape profile is defined (16) for a surface feature on a substrate by applying (38) a transform function F(x) to an image intensity map I(x,y) obtained (40) by inspecting the substrate with a scanning electron microscope (12). The transform function F(x) is developed (34) by correlating the image intensity map of a first wafer (18) to a height vector (32) obtained by inspecting the first wafer with a more accurate metrology tool, for example a stylus nanoprofilometer (14). A simple ratio-based transform may be used to develop F(x). An asymmetric multiple parameter characterization of the three dimensional shape profile may be developed (74) by plotting critical space and width dimensions (SL, SR, W1, WR) from a vertical axis (C—C) as a function of height of the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.