Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US6716301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2001 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jun 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.