Patent · US Expired

Functional device and method of manufacturing the same

US6716664B2 · kind B2 · utility

4Cited by
5References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 20, 2003
Grant dateApr 6, 2004
Priority date
Expiry dateMar 20, 2023

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/0227
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A functional device free from cracking and having excellent functional characteristics, and a method of manufacturing the same are disclosed. A low-temperature softening layer (12) and a heat-resistant layer (13) are formed in this order on a substrate (11) made of an organic material such as polyethylene terephthalate, and a functional layer (14) made of polysilicon is formed thereon. The functional layer (14) is formed by crystallizing an amorphous silicon layer, which is a precursor layer, with laser beam irradiation. When a laser beam is applied, heat is transmitted to the substrate (11) and the substrate (11) tends to expand. However, a stress caused by a difference in a thermal expansion coefficient between the substrate (11) and the functional layer (14) is absorbed by the low-temperature softening layer (12), so that no cracks and peeling occurs in the functional layer (14). The low-temperature softening layer (12) is preferably made of a polymeric material containing an acrylic resin. By properly interposing a metal layer and a heat-resistant layer between the substrate (11) and the functional layer (14), a laser beam of higher intensity can be irradiated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.