Semiconductor with a nitrided silicon gate oxide and method
US6716695B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Dec 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a transistor includes providing a semiconductor substrate having a surface and forming a nitride layer outwardly of the surface of the substrate. The nitride layer is oxidized to form a nitrided silicon oxide layer comprising an oxide layer beneath the nitride layer. A high-K layer is deposited outwardly of the nitride layer, and a conductive layer is formed outwardly of the high-K layer. The conductive layer, the high-K layer, and the nitrided silicon oxide layer are etched and patterned to form a gate stack. Sidewall spacers are formed outwardly of the semiconductor substrate adjacent to the gate stack, and source/drain regions are formed in the semiconductor substrate adjacent to the sidewall spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.