Process for producing two differently doped adjacent regions in an integrated semiconductor
US6716712B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 22, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jan 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During the production of integrated semiconductor structures, it is often necessary to differently dope immediately adjacent regions. A method is provided for producing two adjacent regions of a predetermined area in an integrated semiconductor, whereby a first region of the two adjacent regions includes a doping with a lower target concentration than a second region. The predetermined area of a semiconductor blank is doped with a dopant until a concentration of the dopant is obtained that is at least as high as the target concentration of the second region. A protective layer is applied to the second region, and the dopant is out-diffused from the first region until a concentration of dopant is obtained that corresponds to the target concentration of the first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.