Semiconductor diode and method for producing the same
US6716714B1 · kind B1 · utility
2Cited by
3References
3Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 18, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Jul 18, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
Abstract
A semiconductor arrangement and a method for manufacturing the semiconductor arrangement are provided, which arrangement and method allow an improvement in the current-carrying capacity for given chip dimensions. The semiconductor arrangement includes trenches introduced in the interior of the chip, which trenches reduce power loss and improve the heat dissipation of the chip, as well as reduce the forward voltage of diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.