Semiconductor memory device
US6717875B2 · kind B2 · utility
2Cited by
2References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 15, 2002 |
| Grant date | Apr 6, 2004 |
| Priority date | — |
| Expiry date | Nov 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4094
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a semiconductor memory device. A charge recycling circuit is driven to raise a potential of a restore node and a sensing bar node to a given potential before a sensing operation is performed. After the sensing operation is performed, electric charges discharged from the restore node and from the sensing bar node are stored using the charge recycling circuit and can then be used when a next sensing operation is performed. Therefore, current consumed when the sensing operation is performed can be reduced and the power consumption can be thus reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.