Patent · US Expired

VCSEL with monolithically integrated photodetector

US6717972B2 · kind B2 · utility

71Cited by

7References

15Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Gunther Steinle · Munich, DE
Hans-Dietrich Wolf · Gerbrunn, DE

Key dates

Filing date	Aug 2, 2002
Grant date	Apr 6, 2004
Priority date	—
Expiry date	Aug 2, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/3095
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A VCSEL has an active layer, a photodetector in one of the DBR gratings and with a radiation-absorbing layer that is arranged in an antinode of a laser mode. The laser and the photodetector are electrically driven by a common contact on a thick, heavily doped spacer layer that ensures low laser impedance and little electrical crosstalk between the laser and the photodetector.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.