Patent · US Expired

Porous semiconductor-based optical interferometric sensor

US6720177B2 · kind B2 · utility

45Cited by
10References
6Claims
0Family size

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Key dates

Filing dateFeb 28, 2001
Grant dateApr 13, 2004
Priority date
Expiry dateAug 2, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S436/805
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

The measurement of the wavelength shifts in the reflectometric interference spectra of a porous semiconductor substrate such as silicon, make possible the highly sensitive detection, identification and quantification of small analyte molecules. The sensor of the subject invention is effective in detecting multiple layers of biomolecular interactions, termed “cascade sensing”, including sensitive detection of small molecule recognition events that take place relatively far from the semiconductor surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.