Method of fabrication and device for electromagnetic-shielding structures in a damascene-based interconnect scheme
US6720245B2 · kind B2 · utility
31Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2001 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Sep 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A shielded interconnect and a method of manufacturing a shielded interconnect implemented in a damascene back-end-of-line technology to form electromagnetically shielded interconnects. The standard metallization of the damascene technology is used as a core layer in a coaxial interconnect line. Prior to filling the via and trench openings in the damascene stack with this standard metallization, conductive and dielectric layers are formed as shield and insulator layers, respectively, of the coaxial interconnect line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.