Semiconductor device with silicon-carbon-oxygen dielectric having improved metal barrier adhesion and method of forming the device
US6720255B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2002 |
| Grant date | Apr 13, 2004 |
| Priority date | — |
| Expiry date | Dec 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a dielectric layer (226) in a fixed position relative to the wafer, where the dielectric layer comprises an atomic concentration of each of silicon, carbon, and oxygen. After the forming step, the method exposes (118) the electronic device to a plasma such that the atomic concentration of carbon in a portion of the dielectric layer is increased and the atomic concentration of oxygen in a portion of the dielectric layer is decreased. After the exposing step, the method forms a barrier layer (120) adjacent at least a portion of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.