Gallium nitride-based semiconductor light emitting device

US6720570B2 · kind B2 · utility

Assignee

• TEKCORE CO., LTD. · TW

Inventors

• Chia-Ming Lee · Sanxing, TW
• Jen-Inn Chyi · New Taipei, TW

Key dates

• Filing date: Apr 17, 2002
• Grant date: Apr 13, 2004
• Expiry date: Jun 6, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/816

Abstract

According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n++ layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p+ layer is disposed co-extensively on the n++ layer of the LED according to the invention, with a p layer further disposed co-extensively on the p+ layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n+ layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n++ layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n+ layer.