TEKCORE CO., LTD.
25Patents
14Active
25Granted
39Portfolio score
Filing activity: Apr 17, 2002 → Oct 5, 2016 · 11 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD619976S1 | Light-emitting diode | General | 33 | Expired |
| US7166483B2 | High brightness light-emitting device and manufacturing process of the light-emitting device | Electricity | 22 | Expired |
| USD647493S1 | Light-emitting diode | General | 22 | Expired |
| USD647494S1 | Light-emitting diode | General | 21 | Expired |
| US7253061B2 | Method of forming a gate insulator in group III-V nitride semiconductor devices | Electricity | 20 | Expired |
| USD647495S1 | Light-emitting diode | General | 16 | Expired |
| US7598105B2 | Light emitting diode structure and method for fabricating the same | Electricity | 12 | Active |
| US6720570B2 | Gallium nitride-based semiconductor light emitting device | Electricity | 9 | Expired |
| USD559802S1 | Light-emitting diode | General | 8 | Expired |
| US7579202B2 | Method for fabricating light emitting diode element | Emerging Cross-Sectional Technologies | 6 | Active |
| US7977254B2 | Method of forming a gate insulator in group III-V nitride semiconductor devices | Electricity | 6 | Active |
| US7335523B2 | Process for manufacturing a light-emitting device | Electricity | 5 | Active |
| US7713769B2 | Method for fabricating light emitting diode structure having irregular serrations | Electricity | 5 | Active |
| US8101447B2 | Light emitting diode element and method for fabricating the same | Electricity | 4 | Active |
| US8378376B2 | Vertical light-emitting diode | Electricity | 3 | Active |
| US7462505B2 | Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound | Electricity | 2 | Expired |
| US6881602B2 | Gallium nitride-based semiconductor light emitting device and method | Electricity | 1 | Expired |
| US7799593B2 | Light emitting diode structure and method for fabricating the same | Electricity | 1 | Active |
| US8679881B1 | Growth method for reducing defect density of gallium nitride | Electricity | 1 | Active |
| US7022597B2 | Method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes | Electricity | 1 | Expired |
| US7645624B2 | Method for self bonding epitaxy | Electricity | 0 | Active |
| US9997672B2 | Electrode structure of light emitting diode | Electricity | 0 | Active |
| US7901963B2 | Surface roughening method for light emitting diode substrate | Electricity | 0 | Active |
| US9478711B2 | Transparent conductive layer structure of light emitting diode | Electricity | 0 | Active |
| US7981705B2 | Method of manufacturing a vertical type light-emitting diode | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.