Patent · US Expired

Plasma processing method and photoelectric conversion device

US6720576B1 · kind B1 · utility

25Cited by
19References
32Claims
0Family size

Assignees

Inventors

Key dates

Filing dateSep 9, 1998
Grant dateApr 13, 2004
Priority date
Expiry dateDec 11, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A photoelectric conversion device taking the form of a thin film and having a substrate exhibiting poor thermal resistance. The device prevents thermal deformation which would normally be caused by local application of excessive heat to the substrate. The device has output terminals permitting the output from the device to be taken out. The output terminals are formed on the surface of the substrate opposite to the photoelectric conversion device. The device further includes electrical connector portions for electrically connecting the electrodes of the device with the output terminals. The present invention also provides a method of treating a substrate having poor thermal resistance with a plasma with a high throughput. The substrate is continuously supplied into a reaction chamber and treated with a plasma. This supply operation is carried out in such a way that the total length of the substrate existing in a plasma processing region formed by electrodes is longer than the length of the electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.