Magnetic head P1 magnetic pole notching with reduced polymer deposition
US6723252B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Oct 7, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/232
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention includes a two-step etching process for notching the P1 pole of the write head element of a magnetic head. In a first step, the preferred embodiment utilizes a combination of C2F6 and argon gases (designated as C2F6/Ar) as the etchant gas to preferentially etch portions of the alumna write gap layer. Thereafter, in the second step, argon is used as the etchant gas to preferentially etch the P1 pole material. The C2F6/Ar etchant gas preferably includes C2F6 gas in a concentration range of from 50% to 90%, with a preferred concentration range being from 70% to 80%. The etching of the alumna write gap layer is preferably conducted with a first echant ion beam angle of from 5° to 30°, and a second etchant ion beam angle of from 65° to 85°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.