Method of producing semiconductor device and semiconductor substrate
US6723541B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Jun 7, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a strain-relaxed Si—Ge virtual substrate for use in a semiconductor substrate which is planar and of less defects for improving the performance of a field effect semiconductor device, which method comprises covering an Si—Ge layer formed on an SOI substrate with an insulating layer to prevent evaporation of Ge, heating the mixed layer of silicon and germanium at a temperature higher than a solidus curve temperature determined by the germanium content of the Si—Ge layer into a partially melting state, and diffusing germanium to the Si layer on the insulating layer, thereby solidifying the molten Si—Ge layer to obtain a strain-relaxed Si—Ge virtual substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.