Thin film deposition method including using atomic layer deposition without purging between introducing the gaseous reactants
US6723595B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 1, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Feb 1, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention discloses a method of fabricating a thin film in a chamber where a heater and a suscepter are located. The method includes the steps of disposing an object on the susceptor so as to form the thin film thereon; heating the object; a first sub-step of introducing a first gaseous reactant into the first chamber such that the first gaseous reactant is absorbed on the object to form an absorption layer; a second sub-step of introducing a second gaseous reactant into the first chamber such that the second gaseous reactant reacts with the absorption layer absorbed on the object; and a third sub-step of introducing a reducing gas into the first camber such that the reducing gas reduces by-products and impurities of the first and second gaseous reactants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.