Plasma processing method
US6723651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Jan 7, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma processing a silicon-containing object to be processed at a high etching rate without causing a surface of the object to have a hazy appearance, so that this surface can have an excellent visual quality. In the plasma processing method of etching the surface of the semiconductor wafer, gas containing sulfur hexafluoride and helium is used as a plasma-generating gas. A fluorine radical as an active substance which reacts with silicon of the surface of the semiconductor wafer, gaseous silicon tetrafluoride yielded by the reaction and a compound (SFn) of fluorine and sulfur that is generated as a reaction product are removed by the helium gas functioning as carrier gas. The helium gas prevents the reaction product from adhering to the surface of the wafer again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.