Gate structure and method
US6723658B2 · kind B2 · utility
8Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Jul 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET structure with silicate gate dielectrics and silicon or metal gates with HF-based wet silicate gate dielectric etch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.