Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride
US6723662B2 · kind B2 · utility
2Cited by
9References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2003 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | Jul 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with a reduced amount of chloride are disclosed. A gate oxide film is formed on a substrate on an active region adjacent to a trench isolation region in a first gas atmosphere with a first amount of chloride. The gate oxide film is annealed in a second gas atmosphere including a second amount of chloride that is greater than the first amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.