Sung-Eui Kim
18Patents
7h-index
31Co-inventors
66Inventor score
Filing activity: Oct 27, 1994 → Sep 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6461937B1 | Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching | Electricity | 37 | Expired |
| US6717231B2 | Trench isolation regions having recess-inhibiting layers therein that protect against overetching | Electricity | 22 | Expired |
| US6914316B2 | Semiconductor trench isolation structure | Electricity | 16 | Expired |
| US5677232A | Methods of fabricating combined field oxide/trench isolation regions | Electricity | 12 | Expired |
| US5824594A | Integrated circuit device isolating methods including silicon spacers and oxidation barrier films | Electricity | 10 | Expired |
| US5581300A | Solid state image sensor array having photochromic layer surrounded by passive layer for multiple photoelectric conversion elements in the array | Emerging Cross-Sectional Technologies | 9 | Expired |
| US10037999B2 | Semiconductor device including landing pad for connecting substrate and capacitor | Electricity | 8 | Active |
| US9349633B2 | Semiconductor devices and methods of manufacturing the same | Electricity | 5 | Active |
| US6093622A | Isolation method of semiconductor device using second pad oxide layer formed through chemical vapor deposition (CVD) | Electricity | 5 | Expired |
| US9330960B2 | Semiconductor devices including capacitors | Electricity | 5 | Active |
| US6794263B1 | Method of manufacturing a semiconductor device including alignment mark | Emerging Cross-Sectional Technologies | 3 | Expired |
| US9431476B2 | Semiconductor devices including capacitors and methods of manufacturing the same | Electricity | 2 | Active |
| US6723662B2 | Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride | Electricity | 2 | Expired |
| US7387943B2 | Method for forming layer for trench isolation structure | Electricity | 1 | Expired |
| US9613966B2 | Semiconductor device | Electricity | 1 | Active |
| US7714325B2 | Trench isolation structure | Electricity | 0 | Active |
| US6893982B2 | Method for forming a thin film, methods for forming a gate electrode and transistor using the same, and a gate electrode manufactured using the same | Electricity | 0 | Expired |
| US11955578B2 | Optoelectronic apparatus and method of manufacturing the same | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.