MOSFET device having geometry that permits frequent body contact
US6724044B2 · kind B2 · utility
24Cited by
5References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 10, 2002 |
| Grant date | Apr 20, 2004 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A MOSFET device design is provided that effectively addresses the problems arising from the parasitic bipolar transistor that is intrinsic to the device. The MOSFET device comprises: (a) a body region; (b) a plurality of body contact regions; (c) a plurality of source regions; (d) a plurality of drain regions; and (d) a gate region. In plan view, the source regions and the drain regions are arranged in orthogonal rows and columns, and at least a portion of the body contact regions are bordered by four of the source and drain regions, preferably two source regions and two drain regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.